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| NTF3055L175 Preferred Device Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com * Pb-Free Packages are Available Applications 2.0 A, 60 V RDS(on) = 175 mW N-Channel D * * * * Power Supplies Converters Power Motor Controls Bridge Circuits G MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MW) Gate-to-Source Voltage - Continuous - Non-repetitive (tp 10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 3.6 A, L = 10 mH, VDS = 60 Vdc) Thermal Resistance - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS Value 60 60 15 20 2.0 1.2 6.0 2.1 1.3 0.014 -55 to 175 65 Unit Vdc Vdc Vdc Vpk Adc 1 4 S 2 3 SOT-223 CASE 318E STYLE 3 ID ID IDM PD MARKING DIAGRAM Apk W W W/C C mJ 5L175 L WW = Device Code = Location Code = Work Week 5L175 LWW TJ, Tstg EAS PIN ASSIGNMENT 4 Drain C/W RqJA RqJA TL 72.3 114 260 C 1 2 3 1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area 0.995 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2-2.4 oz. (Cu. Area 0.272 in2). Gate Drain Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 February, 2004 - Rev. 2 Publication Order Number: NTF3055L175/D NTF3055L175 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 1.0 Adc) Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 2.0 Adc) (VGS = 5.0 Vdc, ID = 1.0 Adc, TJ = 150C) Forward Transconductance (Note 3) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 2.0 Adc, Vd 2 0 Ad VGS = 5.0 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 150C) (Note 3) VSD - - trr (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. Switching characteristics are independent of operating junction temperatures. ta tb QRR - - - - 0.84 0.68 28.3 15.6 12.7 0.027 1.0 - - - - - mC ns Vdc (VDD = 30 Vdc, ID = 2.0 Adc, VGS = 5.0 Vdc, 5 0 Vdc RG = 9.1 W) (Note 3) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 10.2 21 14.3 15.3 5.1 1.4 2.5 20 40 30 30 10 - - nC ns (VDS = 25 Vdc, VGS = 0 V, Vd V f = 1.0 MHz) Ciss Coss Crss - - - 194 70 29 270 100 40 pF (VDS = 8.0 Vdc, ID = 1.5 Adc) VGS(th) 1.0 - RDS(on) - VDS(on) - gfs - 0.32 0.57 3.2 0.42 - - Mhos 155 175 Vdc 1.7 4.2 2.0 - Vdc mV/C mW (VGS = 15 Vdc, VDS = 0 Vdc) V(BR)DSS 60 - IDSS - - IGSS - - - - 1.0 10 100 nAdc 72.8 74.4 - - Vdc mV/C mAdc Symbol Min Typ Max Unit Reverse Recovery Time http://onsemi.com 2 NTF3055L175 3.2 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 2.5 V VGS = 5 V VGS = 3.5 V VGS = 4 V VGS = 3 V 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 1 1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25C TJ = -55C TJ = 100C VDS 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.28 VGS = 5 V 0.24 0.2 TJ = 25C 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = -55C TJ = 100C 0.28 VGS = 10 V 0.24 0.2 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = 25C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 1 A VGS = 5 V IDSS, LEAKAGE (nA) 1000 VGS = 0 V TJ = 150C 100 TJ = 125C 10 TJ = 100C 1 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTF3055L175 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 700 600 C, CAPACITANCE (pF) 7 VGS 6 5 4 3 2 1 0 0 ID = 2 A TJ = 25C 1 2 3 4 5 6 Q1 QT VDS = 0 V Ciss VGS = 0 V TJ = 25C 500 400 300 Ciss 200 Coss 100 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 Crss Q2 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 2 A VGS = 5 V t, TIME (ns) 2 Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge VGS = 0 V TJ = 25C 1.6 tr 10 td(on) 1.2 tf td(off) 0.8 0.4 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 100 ID, DRAIN CURRENT (AMPS) VGS = 15 V SINGLE PULSE TC = 25C 70 Figure 10. Diode Forward Voltage versus Current 10 ms 1 ms 100 ms ID = 6 A 60 50 40 30 20 10 0 25 50 75 100 125 150 175 10 10 ms 1 0.1 0.01 0.001 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 dc 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTF3055L175 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 D = 0.5 10 0.2 0.1 0.05 1 TEST TYPE > MIN PAD 1 OZ (Cu Area = 0.272 sq in) < DIE SIZE 56 X 56 MILS RqJC = MIN PAD 1 OZ (Cu Area = 0.272 sq in) C/W P(pk) 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) t2 DUTY CYCLE, D = t1/t2 10 100 1000 t1 1 Figure 13. Thermal Response ORDERING INFORMATION Device NTF3055L175T1 NTF3055L175T1G NTF3055L175T3 NTF3055L175T3G NTF3055L175T3LF NTF3055L175T3LFG Package SOT-223 (TO-261) SOT-223 (TO-261) (Pb-Free) SOT-223 (TO-261) SOT-223 (TO-261) (Pb-Free) SOT-223 (TO-261) SOT-223 (TO-261) (Pb-Free) Shipping 1000 / Tape & Reel 1000 / Tape & Reel 4000 / Tape & Reel 4000 / Tape & Reel 4000 / Tape & Reel 4000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTF3055L175 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 4 S 1 2 3 B D L G J C 0.08 (0003) H M K SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 SOT-223 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTF3055L175/D |
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